Yangyuan Wang : rechercher sur Z-Library

Année:

2010

Langue:

english

Fichier:

PDF, 420 KB

english, 2010

Hot carrier degradation behavior in SOI dynamic-threshold-voltage nMOSFET’s (n-DTMOSFET) measured by gated-diode configuration

Ru Huang, Jinyan Wang, Jin He, Min Yu, Xing Zhang, Yangyuan Wang

Journal:

Année:

2003

Langue:

english

Fichier:

PDF, 153 KB

english, 2003

Challenges of 22 nm and beyond CMOS technology

Ru Huang, HanMing Wu, JinFeng Kang, DeYuan Xiao, XueLong Shi, Xia An, Yu Tian, RunSheng Wang, LiangLiang Zhang, Xing Zhang, YangYuan Wang

Journal:

Année:

2009

Langue:

english

Fichier:

PDF, 2.79 MB

english, 2009

Extraction of the lateral distribution of interface traps in MOSFETs by a novel combined gated-diode technique

Jin He, Xing Zhang, Ru Huang, Yangyuan Wang

Journal:

Année:

2001

Langue:

english

Fichier:

PDF, 203 KB

english, 2001

HCI and NBTI induced degradation in gate-all-around silicon nanowire transistors

Ru Huang, Runsheng Wang, Changze Liu, Liangliang Zhang, Jing Zhuge, Yu Tao, Jibin Zou, Yuchao Liu, Yangyuan Wang

Journal:

Année:

2011

Langue:

english

Fichier:

PDF, 1.47 MB

english, 2011

High temperature induced failure in Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructure

Zhihua Dong, Jinyan Wang, C.P. Wen, Shenghou Liu, Rumin Gong, Min Yu, Yilong Hao, Fujun Xu, Bo Shen, Yangyuan Wang

Journal:

Année:

2012

Langue:

english

Fichier:

PDF, 744 KB

english, 2012

Experimental Investigations on Carrier Transport in Si Nanowire Transistors: Ballistic Efficiency and Apparent Mobility

Runsheng Wang, Hongwei Liu, Ru Huang, Jing Zhuge, Liangliang Zhang, Dong-Won Kim, Xing Zhang, Donggun Park, Yangyuan Wang

Journal:

Année:

2008

Langue:

english

Fichier:

PDF, 779 KB

english, 2008

Resistive Switching in Organic Memory Device Based on Parylene-C With Highly Compatible Process for High-Density and Low-Cost Memory Applications

Huang, Ru, Tang, Yu, Kuang, Yongbian, Ding, Wei, Zhang, Lijie, Wang, Yangyuan

Journal:

Année:

2012

Langue:

english

Fichier:

PDF, 1.10 MB

english, 2012

[IEEE 2014 IEEE International Symposium on Circuits and Systems (ISCAS) - Melbourne VIC, Australia (2014.6.1-2014.6.5)] 2014 IEEE International Symposium on Circuits and Systems (ISCAS) - Resistive switching in organic memory devices for flexible applications

Huang, Ru, Cai, Yimao, Liu, Yefan, Bai, Wenliang, Kuang, Yongbian, Wang, Yangyuan

Année:

2014

Langue:

english

Fichier:

PDF, 1.10 MB

english, 2014

[IEEE 2020 IEEE International Solid- State Circuits Conference - (ISSCC) - San Francisco, CA, USA (2020.2.16-2020.2.20)] 2020 IEEE International Solid- State Circuits Conference - (ISSCC) - 20.2 A 57nW Software-Defined Always-On Wake-Up Chip for IoT Devices with Asynchronous Pipelined Event-Driven Architecture and Time-Shielding Level-Crossing ADC

Wang, Zhixuan, Ye, Le, Zhanq, Hao, Ru, Jiayoon, Fan, Haitao, Wang, Yangyuan, Huang, Ru

Année:

2020

Fichier:

PDF, 2.03 MB

2020

Scaling of lowered source/drain (LSD) and raised source/drain (RSD) ultra-thin body (UTB) SOI MOSFETs

Xia An, Ru Huang, Xing Zhang, Yangyuan Wang

Journal:

Année:

2005

Langue:

english

Fichier:

PDF, 359 KB

english, 2005

Benchmark tests on surface potential based charge-sheet models

Jin He, Xing Zhang, Ganggang Zhang, Yangyuan Wang

Journal:

Année:

2006

Langue:

english

Fichier:

PDF, 189 KB

english, 2006

A carrier-based analytic DCIV model for long channel undoped cylindrical surrounding-gate MOSFETs

Jin He, Xing Zhang, Ganggang Zhang, Mansun Chan, Yangyuan Wang

Journal:

Année:

2006

Langue:

english

Fichier:

PDF, 209 KB

english, 2006

VDNROM: A novel four-physical-bits/cell vertical channel dual-nitride-trapping-layers ROM for high density flash memory applications

Falong Zhou, Yimao Cai, Ru Huang, Yan Li, Xiaonan Shan, Jia Liu, Ao Guo, Xing Zhang, Yangyuan Wang

Journal:

Année:

2007

Langue:

english

Fichier:

PDF, 536 KB

english, 2007

A novel vertical channel self-aligned split-gate flash memory

Dake Wu, Falong Zhou, Ru Huang, Yan Li, Yimao Cai, Ao Guo, Xing Zhang, Yangyuan Wang

Journal:

Année:

2009

Langue:

english

Fichier:

PDF, 354 KB

english, 2009

High breakdown AlGaN/GaN MOSHEMT with thermal oxidized Ni/Ti as gate insulator

Zhihua Dong, Jinyan Wang, C.P. Wen, Danian Gong, Ying Li, Min Yu, Yilong Hao, Fujun Xu, Bo Shen, Yangyuan Wang

Journal:

Année:

2010

Langue:

english

Fichier:

PDF, 467 KB

english, 2010

A two-dimensional physically-based current model for deep-submicrometer SOI dynamic threshold-voltage MOSFET

Ru Huang, Xing Zhang, RuQi Han, YangYuan Wang

Journal:

Sensors and Actuators A: Physical

Année:

2003

Langue:

english

Fichier:

PDF, 228 KB

english, 2003

An improved TMAH Si-etching solution without attacking exposed aluminum

Guizhen Yan, Philip C.H. Chan, I-Ming Hsing, Rajnish K. Sharma, Johnny K.O. Sin, Yangyuan Wang

Journal:

Année:

2001

Langue:

english

Fichier:

PDF, 401 KB

english, 2001

A new process for releasing micromechanical structures in surface micromachining with polysilicon support and LPCVD Si3N4 embedded mask

Zhixiong Xiao, Yilong Hao, Guobing Zhang, Guoying Wu, Zhihong Li, Wenru Chen, Shimei Liu, Ting Li, Tiesong Wang, Yangyuan Wang

Journal:

Sensors and Actuators A: Physical

Année:

1999

Langue:

english

Fichier:

PDF, 1.76 MB

english, 1999

A bulk micromachined vibratory lateral gyroscope fabricated with wafer bonding and deep trench etching

Zhihong Li, Zhenchuan Yang, Zhixiong Xiao, Yilong Hao, Ting Li, Guoying Wu, Yangyuan Wang

Journal:

Sensors and Actuators A: Physical

Année:

2000

Langue:

english

Fichier:

PDF, 1.71 MB

english, 2000

A novel voltage-type sense amplifier for low-power nonvolatile memories

Ming Li, JinFeng Kang, YangYuan Wang

Journal:

Année:

2010

Langue:

english

Fichier:

PDF, 483 KB

english, 2010

A low power and small area all digital delay-locked loop based on ring oscillator architecture

JiaPeng Zheng, Wei Li, XueQing Lu, YuHua Cheng, YangYuan Wang

Journal:

Année:

2012

Langue:

english

Fichier:

PDF, 536 KB

english, 2012

Process optimization of plasma nitridation SiON for 65 nm node gate dielectrics

YanDong He, Xing Zhang, YangYuan Wang

Journal:

Année:

2011

Langue:

english

Fichier:

PDF, 537 KB

english, 2011

Equivalent doping profile transformation: a semi-empirical, analytical method for predicting breakdown characteristics of an approximate single-diffused parallel-plane junction

Jin He, Xing Zhang, Yangyuan Wang

Journal:

Année:

2001

Langue:

english

Fichier:

PDF, 108 KB

english, 2001

A simple method for optimization of 6H-SiC punch-through junctions used in both unipolar and bipolar power devices

Jin He, Yangyuan Wang, Xing Zhang, Xuemei Xi, Mansun Chan, Ru Huang, Chenming Hu

Journal:

IEEE Embedded Systems Letters

Année:

2002

Langue:

english

Fichier:

PDF, 280 KB

english, 2002

Designing an Adaptive Acoustic Modem for Underwater Sensor Networks

Lingjuan Wu, Trezzo, J., Mirza, D., Roberts, P., Jaffe, J., Yangyuan Wang, Kastner, R.

Journal:

Année:

2012

Langue:

english

Fichier:

PDF, 490 KB

english, 2012

Equivalent junction method to predict 3-D effect of curved-abrupt p-n junctions

Jin He, Xuemei Xi, Mansun Chan, Chenming Hu, Yingxue Li, Xing Zhang, Ru Huang, Yangyuan Wang

Journal:

Année:

2002

Langue:

english

Fichier:

PDF, 234 KB

english, 2002

A Physics-Based Analytic Solution to the MOSFET Surface Potential From Accumulation to Strong-Inversion Region

Jin He, Chan, M., Xing Zhang, Yangyuan Wang

Journal:

Année:

2006

Langue:

english

Fichier:

PDF, 413 KB

english, 2006

The Localized-SOI MOSFET as a Candidate for Analog/RF Applications

Han Xiao, Ru Huang, Jiale Liang, Hongwei Liu, Yu Tian, Yangyuan Wang, Runsheng Wang

Journal:

Année:

2007

Langue:

english

Fichier:

PDF, 400 KB

english, 2007

A Wideband Predictive “Double-” Equivalent-Circuit Model for On-Chip Spiral Inductors

Chuan Wang, Huailin Liao, Chen Li, Ru Huang, Waisum Wong, Xin Zhang, Yangyuan Wang

Journal:

Journal of Micromechanics and Microengineering

Année:

2009

Langue:

english

Fichier:

PDF, 817 KB

english, 2009

Simulation of the Bosch process with a string–cell hybrid method

Zhou, Rongchun, Zhang, Haixia, Hao, Yilong, Wang, Yangyuan

Journal:

Année:

2004

Langue:

english

Fichier:

PDF, 699 KB

english, 2004

Impacts of short-channel effects on the random threshold voltage variation in nanoscale transistors

RunSheng Wang, Tao Yu, Ru Huang, YangYuan Wang

Journal: